| Molecular dynamics simulation of helium ion implantation into silicon and its migration | |
Liu L; Xu ZW; Li RR; Zhu R; Xu J; Zhao JL; Wang C(王超) ; Nordlund K; Fu X; Fang FZ
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| Corresponding Author | Xu, Zongwei(zongweixu@tju.edu.cn) ; Xu, Jun(xujun@pku.edu.cn) |
| Source Publication | NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS
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| 2019-10-01 | |
| Volume | 456Pages:53-59 |
| ISSN | 0168-583X |
| Abstract | In this paper, a model of helium ion implanted monocrystalline Si was constructed by using molecular dynamics (MD) simulation method to study the interaction mechanism of helium ion with monocrystalline Si and helium ion migration. In order to study the damage effect of helium ion implantation on monocrystalline Si, identify diamond structure (IDS), radial distribution function, temperature analysis were calculated and analyzed. The effects of ion doses, beam currents and energies on the damage were studied. Helium ion implanted Si with ion doses of 1 x 10(14)/cm(2) was subsequently heated to 300 K. MD simulation results indicated that IDS damage induced by ion implantation was positively correlated with ion doses as the ion implantation increased to 1 x 10(14)/cm(2). The mean-square displacement of helium atoms was calculated during the temperature rising to 300 K. It was found that the high permeability of helium atoms in Si and the acceleration of atomic thermal motion owing to elevated temperature as well as the existence of larger stress would be helpful to the migration of implant helium atoms. |
| Keyword | Molecular dynamics simulation Ion implantation Helium Si Annealing |
| DOI | 10.1016/j.nimb.2019.06.034 |
| Indexed By | SCI ; EI |
| Language | 英语 |
| WOS ID | WOS:000480669600011 |
| WOS Keyword | BUBBLE FORMATION ; HE-IMPLANTATION ; CAVITIES ; TEMPERATURE ; MECHANISMS ; EVOLUTION ; DEFECTS ; VOIDS |
| WOS Research Area | Instruments & Instrumentation ; Nuclear Science & Technology ; Physics |
| WOS Subject | Instruments & Instrumentation ; Nuclear Science & Technology ; Physics, Atomic, Molecular & Chemical ; Physics, Nuclear |
| Funding Project | National Natural Science Foundation of China[51575389] ; National Natural Science Foundation of China[51511130074] ; National Natural Science Foundation of China[11327902] ; National Natural Science Foundation of China[11605001] ; National Natural Science Foundation of China (NSFC) - German Research Foundation (DFG) International Joint Research Programme[51761135106] ; Natural Science Foundation of Tianjin[15JCYBJC19400] ; State key laboratory of precision measuring technology and instruments[Pi1t1705] ; '111' project by the State Administration of Foreign Experts Affairs ; Ministry of Education of China[B07014] |
| Funding Organization | National Natural Science Foundation of China ; National Natural Science Foundation of China (NSFC) - German Research Foundation (DFG) International Joint Research Programme ; Natural Science Foundation of Tianjin ; State key laboratory of precision measuring technology and instruments ; '111' project by the State Administration of Foreign Experts Affairs ; Ministry of Education of China |
| Classification | Q3 |
| Ranking | 5+ |
| Contributor | Xu, Zongwei ; Xu, Jun |
| Citation statistics | |
| Document Type | 期刊论文 |
| Identifier | http://dspace.imech.ac.cn/handle/311007/79745 |
| Collection | 非线性力学国家重点实验室 |
| Recommended Citation GB/T 7714 | Liu L,Xu ZW,Li RR,et al. Molecular dynamics simulation of helium ion implantation into silicon and its migration[J]. NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS,2019,456:53-59. |
| APA | Liu L.,Xu ZW.,Li RR.,Zhu R.,Xu J.,...&Fang FZ.(2019).Molecular dynamics simulation of helium ion implantation into silicon and its migration.NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS,456,53-59. |
| MLA | Liu L,et al."Molecular dynamics simulation of helium ion implantation into silicon and its migration".NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS 456(2019):53-59. |
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| Jp2019318.pdf（8550KB） | 期刊论文 | 出版稿 | 开放获取 | CC BY-NC-SA | View Download | |
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