| The improvement of GaN-based light-emitting diodes using nanopatterned sapphire substrate with small pattern spacing | |
Zhang, YH; Wei, TB; Wang, JX ; Lan D(蓝鼎); Chen, Y; Hu, Q; Lu, HX; Li, JM; Wei, TB (reprint author), Chinese Acad Sci, Inst Semicond, State Key Lab Solid State Lighting, Beijing 100083, Peoples R China.
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| Source Publication | AIP Advances
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| 2014-02 | |
| Volume | 4Issue:2Pages:27123 |
| ISSN | 2158-3226 |
| Abstract | Self-assembly SiO2 nanosphere monolayer template is utilized to fabricate nanopatterned sapphire substrates (NPSSs) with 0-nm, 50-nm, and 120-nm spacing, receptively. The GaN growth on top of NPSS with 0-nm spacing has the best crystal quality because of laterally epitaxial overgrowth. However, GaN growth from pattern top is more difficult to get smooth surface than from pattern bottom. The rougher surface may result in a higher work voltage. The stimulation results of finite-difference time-domain (FDTD) display that too large or too small spacing lead to the reduced light extracted efficiency (LEE) of LEDs. Under a driving current 350 mA, the external quantum efficiencies (EQE) of GaN-based LEDs grown on NPSSs with 0-nm, 50-nm, and 120-nm spacing increase by 43.3%, 50.6%, and 39.1%, respectively, compared to that on flat sapphire substrate (FSS). The optimized pattern spacing is 50 nm for the NPSS with 600-nm pattern period. (C) 2014 Author(s). All article content, except where otherwise noted, is licensed under a Creative Commons Attribution 3.0 Unported License. |
| Keyword | Extraction |
| Subject Area | Science & Technology - Other Topics ; Materials Science ; Physics |
| DOI | 10.1063/1.4867091 |
| URL | 查看原文 |
| Indexed By | SCI ; EI |
| Language | 英语 |
| WOS ID | WOS:000332450000023 |
| Funding Organization | This work was supported by the National Natural Sciences Foundation of China under Grant 61274040, 61274008 and 51102226, by the National Basic Research Program of China under Grant 2011CB301902, and by the National High Technology Program of China under Grant 2014AA032605. |
| Department | NML空间材料物理力学 |
| Classification | Q3 |
| Citation statistics | |
| Document Type | 期刊论文 |
| Identifier | http://dspace.imech.ac.cn/handle/311007/48797 |
| Collection | 微重力重点实验室 |
| Corresponding Author | Wei, TB (reprint author), Chinese Acad Sci, Inst Semicond, State Key Lab Solid State Lighting, Beijing 100083, Peoples R China. |
| Recommended Citation GB/T 7714 | Zhang, YH,Wei, TB,Wang, JX,et al. The improvement of GaN-based light-emitting diodes using nanopatterned sapphire substrate with small pattern spacing[J]. AIP Advances,2014,4,2,:27123. |
| APA | Zhang, YH.,Wei, TB.,Wang, JX.,蓝鼎.,Chen, Y.,...&Wei, TB .(2014).The improvement of GaN-based light-emitting diodes using nanopatterned sapphire substrate with small pattern spacing.AIP Advances,4(2),27123. |
| MLA | Zhang, YH,et al."The improvement of GaN-based light-emitting diodes using nanopatterned sapphire substrate with small pattern spacing".AIP Advances 4.2(2014):27123. |
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