Molecular dynamics simulation of deposition and growth of cu thin film on si substrate | |
Zhang J(张俊)![]() ![]() ![]() ![]() | |
Source Publication | 28TH INTERNATIONAL SYMPOSIUM ON RAREFIED GAS DYNAMICS 2012, VOLS. 1 AND 2 |
2012 | |
Pages | 919-925 |
Conference Name | 28th International Symposium on Rarefied Gas Dynamics (RGD) |
Conference Date | JUL 09-13, 2012 |
Conference Place | Zaragoza, SPAIN |
Abstract | Growth and properties of Cu thin film deposited on Si substrate is studied using molecular dynamics method. Tersoff potential parameters for the interaction between Cu and Si are fitted to reproduce the lattice structure of copper silicide. We focus on the growth mode, crystalline structure and orientation, and surface morphology of Cu thin film. The effect of substrate temperature on the crystalline orientation and surface roughness is studied. |
Keyword | Thin Film Growth Crystalline Structure And Orientation Surface Roughness Molecular Dynamics Embedded-atom Method Surfaces Systems Metals |
Department | LHD微尺度和非平衡流动 |
ISBN | 978-0-7354-1115-9 |
URL | 查看原文 |
Indexed By | CPCI |
Language | 英语 |
Document Type | 会议论文 |
Identifier | http://dspace.imech.ac.cn/handle/311007/46815 |
Collection | 高温气体动力学国家重点实验室 |
Corresponding Author | Zhang, J (reprint author), Chinese Acad Sci, State Key Lab High Temp Gas Dynam, Inst Mech, Beijing 100190, Peoples R China. |
Recommended Citation GB/T 7714 | Zhang J,Liu C,Shu YH,et al. Molecular dynamics simulation of deposition and growth of cu thin film on si substrate[C]28TH INTERNATIONAL SYMPOSIUM ON RAREFIED GAS DYNAMICS 2012, VOLS. 1 AND 2,2012:919-925. |
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